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Propiedades electrónicas de un anillo cuántico elíptico con sección transversal rectangular
Propiedades electrónicas de un anillo cuántico elíptico con sección transversal rectangular
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Propiedades electrónicas de un anillo cuántico elíptico con sección transversal rectangular. (2019). Revista EIA, 16(31), 77-87. https://doi.org/10.24050/reia.v16i31.1255
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Los estados electrónicos de un anillo cuántico elíptico de GaAs embebido en una matriz de AlxGa1-xAs son investigados mediante la aproximación de masa efectiva. El anillo cuántico es construido con una sección transversal rectangular (dirección radial). La ecuación de Schrödinger es resuelta mediante el método de elementos finitos. En dirección angular se modula la amplitud de la altura, lo que permite la generación de puntos cuánticos a lo largo del anillo. Se reportan las energías del electrón como función de las dimensiones del anillo, tanto las longitudes de las elipses en el plano xy como su altura (eje z).
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