Vertically coupled double conical quantum dot of GaAs/AlxGa1-xAs under hydrostatic pressure and temperature effects

Punto cuántico cónico doble verticalmente acoplado de GaAs/AlxGa1-xAs bajo efectos de presión hidrostática y temperatura

Published 2022-12-20

Punto cuántico cónico doble de GaAs rodeado de Al0,3Ga0,7As de la izquierda con dimensiones: a = 6,5 nm, b variable de 4 nm a 10 nm, c = 3,45 nm, d = 20 nm, e = 30 nm, R1 = 49, 4 nm, R2 = 56,5 nm y con límites frontera de 65 nm de ancho por 60 nm de alto. El punto rojo representa la posición de la impureza en z = 4 nm. Al lado derecho se representa la figura rotada de altura 60 nm y radio 65 nm.
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Vol. 20 No. 39 (2023): Table of contents Revista EIA No. 39
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Vertically coupled double conical quantum dot of GaAs/AlxGa1-xAs under hydrostatic pressure and temperature effects. (2022). Revista EIA, 20(39), 3920 pp. 1-15. https://doi.org/10.24050/reia.v20i39.1652
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Fernanda Mora Rey
Universidad de Antioquia, Colombia
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Ana María López Aristizábal
Universidad de Antioquia, Colombia
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Alvaro Luis Morales Aramburo
Universidad de Antioquia, Colombia
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Carlos Alberto Duque Echeverri
Universidad de Antioquia, Colombia
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Starting from a structure composed of two conical quantum dots (CQDs) vertically coupled of GaAs surrounded by AlxGa1-xAs at a concentration of 0.3, it is first studied how the dimensions of the system cause a change in the confinement, for this the height of the upper quantum well and the optimal one is found to work with, with this defined, the effects of hydrostatic pressure (between 0 GPa and 3 GPa) and temperature (between 0 K and 300 K) on the effective mass, the width band gap (Gap), the dielectric constant and its impact on the self-energies and self-functions of the system. In addition, the effects of including the presence of an impurity in the structure located in the lower quantum well will be evaluated. Making use of the finite element method, variations in the energies and wave functions of the system are evidenced, which are due to  changes of the effective mass and the new potential energy. Analyzing the behavior of the binding energy, a change in the dielectric constant is noted when the system is subjected to a temperature around 200 K, since above this value the Gap changes from being direct to being indirect. Finally, the presence of the impurity in the system generates an additional potential, consequently, the energies in the structure decrease under the evaluated effects, making more forceful changes in the wave functions and energies due to this potential.

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