ENERGÍA DE ENLACE DE EXCITONES EN POZOS CUÁNTICOS DE GaAs/Ga1-xA1 x As
ENERGÍA DE ENLACE DE EXCITONES EN POZOS CUÁNTICOS DE GaAs/Ga1-xA1 x As
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El uso de las estructuras de baja dimensionalidad es un elemento tecnológico clave en la creación de nuevos dispositivos cuánticos funcionales de la siguiente generación de circuitos integrados electrónicos, fotónicos y espintrónicos y muchos otros dispositivos nanotecnológicos que son necesarios para la sociedad de la información del siglo XXI. Una de las propiedades ópticas más importante es la fotoluminiscencia producida por agentes tales como impurezas y excitones en pozos, hilos y puntos cuánticos de arseniuro de galio GaAs con dimensiones nanométricas bajo la influencia de campos eléctricos y magnéticos y presiones externas. Se presenta la energía de enlace para los tres primeros estados excitónicos en pozos cuánticos de GaAs/Ga1-xA1xAs describiendo el sistema por medio de la teoría cuántica, en la aproximación de masa efectiva y usando el método variacional.
Abstract: The use of low dimensional structures is a key technological element in the creation of new quantum functional devices in the development of the next generation of the electronic, photonic, and spintronicintegrated circuits and many other nanoscaled devices that are necessary for the information society of 21st century. One of the most important optical properties is the photoluminescence produced by agents as impurities and excitons in GaAs quantum wells, wires, and dots with nanometric dimensions under the influence of electric and magnetic fields and external pressures. The binding energy for the first three excitonic states in GaAs/Ga1-xA1xAs quantum wells describing the system through quantum theory in the effective mass approximation and using the variational method is presented.
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