Identificación de una nueva fase en la estructura cristalina del compuesto cuaternario Cu2ZnSnSe4 durante la etapa incorporación del ZnSe
Identificación de una nueva fase en la estructura cristalina del compuesto cuaternario Cu2ZnSnSe4 durante la etapa incorporación del ZnSe
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En este trabajo se presenta un estudio de las propiedades estructurales de películas delgadas del compuesto Cu2ZnSnSe4 variando tanto la masa (MX) como la temperatura del sustrato al cual fue evaporado (Ts) el compuesto binario ZnSe. Todas las muestras fueron depositadas por el método de co-evaporación en tres etapas y manteniendo constante los demás parámetros. A partir de las medidas de difracción de Rayos X fue posible establecer con el incremento de la Ts la presencia de fases binarias asociadas al compuesto cuaternario durante el proceso de crecimiento del material. Se encontró que alrededor del pico principal, 2Θ = 27,1°, predominan las fases binarias y la presencia del ZnSe que se forma durante la subsecuente etapa de selenización del material. Una especie de bifurcación en el pico principal (2Θ = 27,1°) fue observado para la transición entre MZnSe = 0,153 g a 0,171 g. Medidas de difracción de rayos x fueron realizadas al compuesto binarios puro, observándose una correspondencia con los picos encontrados alrededor del pico principal del compuesto. Un estudio a través de espectroscopia Raman evidenció corrimientos raman asociados a los compuestos binarios observados por XRD. A partir de la ecuación de Scherrer se encontró que los tamaños de los cristalitos variaban entre 80 y 90 nm.
Abstract: This work presents a study of the structural properties of thin films of the compound Cu2ZnSnSe4 varying both mass (MX) and the substrate temperature which was evaporated (Ts) ZnSe binary compound. All samples were deposited by co-evaporation method in three phases keeping all other parameters constant. From measurements of X-ray diffrac- tion it was possible to establish Ts increasing the presence of associated binary phase’s quaternary compound during the growth process of the material. It was found that around the main peak, 2Θ = 27,1°, predominantly binary phases and the presence of ZnSe which is formed during the subsequent step of selenization of the material. A sort of fork in the main peak (2Θ = 27,1°) was observed for the transition between MZnSe = 0,153 g to 0,171 g. X-Ray diffraction measurements were made at binary compound pure, observing a correspondence with the peaks found around the main peak of the compound. A study by Raman spectroscopy, Raman shifts associated evidenced binary compounds observed by XRD. From the Scherrer equation it was found that crystallite sizes range between 80 and 90 nm.
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